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International Journal of Frontiers in Engineering Technology, 2025, 7(4); doi: 10.25236/IJFET.2025.070409.

Advances in Ion Doping Strategies for LiMnxFe1-xPO4 Cathodes: Progress, Challenges, and Outlook

Author(s)

Ming Liang1, Zhenwei Hu1, Caiyi Yuan1, Ling Chen1,2,3, Wanxuan Yuan4

Corresponding Author:
Ling Chen
Affiliation(s)

1School of Materials and Environment, Guangxi Minzu University, Nanning, Guangxi, China

2Guangxi Key Laboratory of Advanced Structural Materials and Carbon Neutralization, Nanning, Guangxi, China

3Guangxi Engineering Research Center for Advanced Materials and Intelligent Manufacturing, Nanning, Guangxi, China

4School of Intelligent Manufacturing, Guangdong Polytechnic of Water Resources and Electric Engineering, Guangzhou, Guangdong, China

Abstract

LiMnxFe1-xPO4 possesses notable advantages including high energy density, excellent safety performance, scalability for large-scale production, and low cost. Thus emerging as one of the most promising olivine-structured cathode materials. However, key technical hurdles still hinder its large-scale application, such as intrinsically low electrical conductivity and compromised cycling stability induced by the Jahn-Teller effect. Accordingly, this paper commences with an overview of the structural characteristics and underlying reaction mechanisms of lithium iron manganese phosphate LiMnxFe1-xPO4, examines the merits and limitations of Mn/Fe ratio optimization on its electrochemical performance, and provides a comprehensive reviews the of doping modification strategies targeting distinct lattice sites of this material. Finally, the critical issues, new research directions, and perspectives on further commercialization of LiMnxFe1-xPO4 are discussed.

Keywords

Cathode Materials, Lithium Iron Manganese Phosphate, Ion Doping

Cite This Paper

Ming Liang, Zhenwei Hu, Caiyi Yuan, Ling Chen, Wanxuan Yuan. Advances in Ion Doping Strategies for LiMnxFe1-xPO4 Cathodes: Progress, Challenges, and Outlook. International Journal of Frontiers in Engineering Technology (2025), Vol. 7, Issue 4: 59-69. https://doi.org/10.25236/IJFET.2025.070409.

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