Academic Journal of Engineering and Technology Science, 2026, 9(1); doi: 10.25236/AJETS.2026.090109.
Bo Lyu1, Yuhang Liu2
1FAE Group, Shenzhen CECport Technologies Co., Ltd, Shanghai, China
2IC Research and Design Department, Suzhou Link-IC Co., Ltd., Shanghai, China
First, this project developed a simple High Electron Mobility Transistor (HEMT) model in AWR software and evaluated its operation as a detector at a low frequency of 10 GHz. The project then analyzed the results to explain why plasma resonance, rather than electron migration, is used for terahertz radiation detection. Secondly, the current-voltage (I-V) characteristics of the HEMT, along with a recurrence of the self-mixing model for verification, were used to establish the relationship between the detector and the signal. A responsivity scan was conducted for the AC response analysis results, and suggestions for further work on this project were provided. This project also performed a noise analysis of the Noise Equivalent Power (NEP) and examined AC responses under terahertz interaction, illustrating differences among models. Finally, the project validated a commercial HEMT model as a control group and defined key parameters of terahertz detectors to lay the foundation for subsequent antenna integration.
Terahertz detection; GaN HEMT; Plasma resonance; Self-mixing model; Noise Equivalent Power
Bo Lyu, Yuhang Liu. Terahertz Detection Mechanisms and HEMT Modeling for GaN-Based Receivers. Academic Journal of Engineering and Technology Science (2026), Vol. 9, Issue 1: 72-79. https://doi.org/10.25236/AJETS.2026.090109.
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